| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-209 - C4-212 | |
| DOI | https://doi.org/10.1051/jphyscol:1981443 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-209-C4-212
DOI: 10.1051/jphyscol:1981443
1 Department of Applied Electronics, Tokyo Institute of Technology, Nagatsuda, Midori-ku, Yokohama 227, Japan
2 Department of Applied Electronics, Tokyo Institute of Technology, Nagatsuda,, Midori-ku, Yokohama 227, Japan
J. Phys. Colloques 42 (1981) C4-209-C4-212
DOI: 10.1051/jphyscol:1981443
STRUCTURAL MODEL OF FLUORINATED AMORPHOUS-SILICON (a-Si : F)
H. Matsumura1, K. Sakai2, Y. Kawakyu2 and S. Furukawa21 Department of Applied Electronics, Tokyo Institute of Technology, Nagatsuda, Midori-ku, Yokohama 227, Japan
2 Department of Applied Electronics, Tokyo Institute of Technology, Nagatsuda,, Midori-ku, Yokohama 227, Japan
Abstract
A structural model for fluorinated amorphous-silicon containing no hydrogen (a-Si : F) is presented based on the experimental results of transmission electron microscopic measurement, infrared absorption and Rutherford backscattering measurements and their changes due to chemical etching. It is concluded that a-Si : F consists of many amorphous-silicon grains of about 40 Å in size, grain boundaries are filled by SiF4 molecular gas and that the enlargement of grain size is a key factor to improve properties of a-Si : F such as photoconductivity.