| Numéro |
J. Phys. Colloques
Volume 41, Numéro C4, Mai 1980
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
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|---|---|---|
| Page(s) | C4-25 - C4-30 | |
| DOI | https://doi.org/10.1051/jphyscol:1980404 | |
Laser Induced Nucleation in Solids / Nucléation induite par laser dans les solides
J. Phys. Colloques 41 (1980) C4-25-C4-30
DOI: 10.1051/jphyscol:1980404
1 Energy Conversion Devices, Inc. Troy, Michigan 48084, U.S.A.
2 IBM T.J. Watson Research Center, Yorktown Hts., N.Y. 10598, U.S.A.
J. Phys. Colloques 41 (1980) C4-25-C4-30
DOI: 10.1051/jphyscol:1980404
NON-THERMAL LASER INDUCED ORDERING AND PLASMA LIFE TIME
R. Tsu1 et S.S. Jha21 Energy Conversion Devices, Inc. Troy, Michigan 48084, U.S.A.
2 IBM T.J. Watson Research Center, Yorktown Hts., N.Y. 10598, U.S.A.
Abstract
The phonon frequency of partially annealed ion-implanted amorphous silicon is shifted down up to 10 cm-1 from the value for crystalline silicon. We interpret the down shifted values as representing partially annealed intermediate states. Conventional melting models cannot explain the observed shift. Mechanisms for the gradual reordering include assistance from bond-breaking and vacancy-screening by plasmons. A calculation on the upper limit of the plasmon life-time for covalent crystals is presented. Results suggest that excited e-h pairs involved in plasma oscillation can be long-lived in comparison to the single particle electron-phonon interaction.