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Cited article:

MORPHOLOGY AND RESISTIVITY OF CVD POLYCRYSTALLINE SILICON LAYERS CONTAINING CARBON

M. Hendriks, S. Radelaar, Th.H. de Keijser, R. Delhez

J. Phys. Colloques, 43 C1 (1982) C1-307-C1-312

DOI: https://doi.org/10.1051/jphyscol:1982141

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This article has been cited by the following article(s):

Effects of phosphorous-doping and high temperature annealing on CVD grown 3C-SiC

I.J. van Rooyen, J.H. Neethling, A. Henry, E. Janzén, S.M. Mokoduwe, A. Janse van Vuuren and E. Olivier
Nuclear Engineering and Design 251 191 (2012)
https://doi.org/10.1016/j.nucengdes.2011.09.066