J. Phys. Colloques
Volume 51, Numéro C5, Septembre 1990European Congress on Thermal Plasma Processes and Materials Behaviour at High Temperature
|Page(s)||C5-361 - C5-367|
J. Phys. Colloques 51 (1990) C5-361-C5-367
FAST PLASMA DEPOSITION OF CARBON AND SILICON LAYERSJ.J. BEULENS, A.J.M. BUURON, L.A. BISSCHOPS, T.H.J. BISSCHOPS, A.B.M. HUSKEN, G.M.W. KROESEN, G.J. MEEUSEN, C.J. TIMMERMANS, A.T.M. WILBERS et D.C. SCHRAM
Department of Physics, Eindhoven University of Technology. P.O. Box 513, 5600 MB Eindhoven, The Netherlands
By separating plasma production and plasma deposition and by taking advantage of the high specific ionizing power of thermal plasmas, very high deposition rates on large areas of amorphous C-H and Si-H are obtained. The layers have been analyzed by several methods, among which ellipsometry (band gap, absorption in the visible C-H, Si-H bonding types in the infrared), nuclear techniques (hydrogen depth profile), ESCA (type), diffraction (Crystallinity). The plasma is produced at high pressure (0.1 - 1 bar) in a cascaded arc in a carrier gas (argon). Downstream the feed gases (CH4 resp. SiH4) and additional gases (H2) are admixed to the mainstream. Nearly complete dissociation and charge transfer from argon to Si and C takes place whereas the plasma is accelerated to sonic velocities at the high temperature (1 eV).