INTERFACIAL ION MIXING IN METAL-SILICON BILAYERS

Abstract
There has been a great deal of interest in the fabrication of new materials with unique properties using ion mixing technique. Ion mixing is also a strong tool for better understanding of ion-solid interactions such as, amorphisation process, and irradiation damage. In this regard, an attempt was made by this group to simulate the effects of energetic ion motion in metal-silicon bilayers by using a program TRIM-MIXING based on the program TRIM developed by Biersack et al. The main features of this version of the program are : -We have reached recoil profiles which are more accurate than what is presented in the literature by following the collisional cascades of short and long range recoil atoms throughout the sample. -Mixing interface is more precisely characterized by taking into accoung both the recoils of the first layer into the second layer and vice versa. Simulations were performed on various Au-Si bilayers. The intermixing recoil profiles are presented and compared to other experimental and theoretical data available in the literature. Our data is in very good agreement with the experimental results obtained by other authors.