| Numéro |
J. Phys. Colloques
Volume 50, Numéro C8, Novembre 1989
36th International Field Emission Symposium
|
|
|---|---|---|
| Page(s) | C8-179 - C8-190 | |
| DOI | https://doi.org/10.1051/jphyscol:1989832 | |
36th International Field Emission Symposium
J. Phys. Colloques 50 (1989) C8-179-C8-190
DOI: 10.1051/jphyscol:1989832
Lithography Division, Rutherford Appleton Laboratory, Chilton, Didcot, Oxon, Great-Britain
J. Phys. Colloques 50 (1989) C8-179-C8-190
DOI: 10.1051/jphyscol:1989832
FOCUSED ION BEAMS IN MICROFABRICATION
P.D. PREWETTLithography Division, Rutherford Appleton Laboratory, Chilton, Didcot, Oxon, Great-Britain
Abstract
Focused ion beams, generated from high intensity liquid metal field emission ion sources, can be used both for machining and deposition. Their potential applications in microfabrication of semiconductor microcircuits range from mask and integrated circuit repair to lithography and direct write ion implantation doping.