| Numéro |
J. Phys. Colloques
Volume 50, Numéro C5, Mai 1989
Actes de la 7ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse / Proceedings of the Seventh European Conference on Chemical Vapour Deposition
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| Page(s) | C5-613 - C5-613 | |
| DOI | https://doi.org/10.1051/jphyscol:1989572 | |
J. Phys. Colloques 50 (1989) C5-613-C5-613
DOI: 10.1051/jphyscol:1989572
PROPERTIES OF SnO2 : F FILMS PREPARED BY APCVD
F. ZONG, S. HAN et S. LIDepartment of Physics, Shandong University, Jinan, P. R. China
Abstract
This paper presents the electrical, optical properties and structural properties of undoped and F-doped tin oxide films prepared by atmospheric pressure chemical vapour deposition (APCVD) from the anhydrous stannic chloride and water reaction system doped with freon. Resistivity as low as 2.0 x 10-4Ωcm with high optical transmission (the average total transmission within the limits of visible light is over 90%) have been obtained in F-doped tin oxide films. The figure of merit Q=RshlnT of these films is the highest among the results reported on doped tin oxide films known to the author. The influences of the main controlling deposition parameters on electrical, optical properties and structural characteristics of undoped and F-doped tin oxide films have been studied.