| Numéro |
J. Phys. Colloques
Volume 50, Numéro C5, Mai 1989
Actes de la 7ème Conférence Européenne sur les Dépôts Chimiques en Phase Gazeuse / Proceedings of the Seventh European Conference on Chemical Vapour Deposition
|
|
|---|---|---|
| Page(s) | C5-45 - C5-45 | |
| DOI | https://doi.org/10.1051/jphyscol:1989508 | |
J. Phys. Colloques 50 (1989) C5-45-C5-45
DOI: 10.1051/jphyscol:1989508
A MATHEMATICAL MODEL OF THE SILICON CHEMICAL VAPOR DEPOSITION IN A ATMOSPHERIC PRESSURE COLD-WALL REACTOR
Y.J. PARK1, G.J. MIN1, Y.W. PARK1, C.O. PARK2 et J.S. CHUN11 Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology, PO Box 131, Cheongryang, Seoul, Korea
2 Department of Electronic Material Engineering Korea Institute of Technology, 400, Kusung-dong, Su-gu, Taejon, 302-338, Korea
Abstract
The deposition of polycrystalline and amorphous silicon from SiH4-H2 and SiH4-CH4- H2 system has been studied. Deposition temperature between 600 and 850°C have been used in a atmospheric pressure reactor. It is found that the deposition rate of silicon in SiH4-CH4-H2 system is reduced by about half SiH4-H2 system. Therefore, to investigate the effect of CH4 in silicon deposition we describe numerical models of the gas-phase hydrodynamics and chemical kinetics. The chemical kinetic model, which includes a 16-step elementary reaction mechanism in SiH4-H2 system and a 32-step in SiH4-CH4-H2 system for the thermal decomposition of silane, predicts chemical species concentration profiles and fluid dynamical simulation predicts gas-phase temperature and velocity profiles. The chemical kinetic calculations indicate significant differences in the levels of silicon species for SiH4-H2 system versus SiH4-CH4-H2 system and decomposition of SiH2 is important in describing silicon chemical vapor deposition.