| Numéro |
J. Phys. Colloques
Volume 49, Numéro C6, Novembre 1988
35th International Field Emission Symposium / 35éme Symposium International d'Emission de Champ
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| Page(s) | C6-257 - C6-262 | |
| DOI | https://doi.org/10.1051/jphyscol:1988643 | |
35th International Field Emission Symposium / 35éme Symposium International d'Emission de Champ
J. Phys. Colloques 49 (1988) C6-257-C6-262
DOI: 10.1051/jphyscol:1988643
1 Institute of Industrial Science, University of Tokyo, 7-22-1, Roppongi, Minato-ku, Tokyo 106, Japan
2 Ulvac Corporation, 2500 Hagisono, Chigasaki 253, Japan
J. Phys. Colloques 49 (1988) C6-257-C6-262
DOI: 10.1051/jphyscol:1988643
SURFACE DIFFUSION OF ATOMS ON GERMANIUM SURFACES MEASURED BY COUNTING-FLUCTUATIONS OF FIELD-EMITTED ELECTRONS
T. HONDA1, T. OKANO1 et Y. TUZI1, 21 Institute of Industrial Science, University of Tokyo, 7-22-1, Roppongi, Minato-ku, Tokyo 106, Japan
2 Ulvac Corporation, 2500 Hagisono, Chigasaki 253, Japan
Abstract
Surface diffusion of Ga atoms on a Ge(100) plane was studied by using digital autocorrelation analysis of field-emitted electrons. The present method was based on pulse-counting of field-emitted electrons. Compared with an analogue autocorrelation of continuous field emission current, significant reduction of field emission intensity necessary for the autocorrelation analysis was accomplished. Ga atoms were deposited on a germanium field emission tip oriented <100> direction. Surface diffusion coefficients of Ga on a Ge(100) plane were determined at θ=0.3 in the temperature range of 470K-530K. Activation energy of diffusion was 0.6eV at the coverage.