J. Phys. Colloques
Volume 49, Numéro C6, Novembre 198835th International Field Emission Symposium / 35éme Symposium International d'Emission de Champ
|Page(s)||C6-257 - C6-262|
J. Phys. Colloques 49 (1988) C6-257-C6-262
SURFACE DIFFUSION OF ATOMS ON GERMANIUM SURFACES MEASURED BY COUNTING-FLUCTUATIONS OF FIELD-EMITTED ELECTRONST. HONDA1, T. OKANO1 et Y. TUZI1, 2
1 Institute of Industrial Science, University of Tokyo, 7-22-1, Roppongi, Minato-ku, Tokyo 106, Japan
2 Ulvac Corporation, 2500 Hagisono, Chigasaki 253, Japan
Surface diffusion of Ga atoms on a Ge(100) plane was studied by using digital autocorrelation analysis of field-emitted electrons. The present method was based on pulse-counting of field-emitted electrons. Compared with an analogue autocorrelation of continuous field emission current, significant reduction of field emission intensity necessary for the autocorrelation analysis was accomplished. Ga atoms were deposited on a germanium field emission tip oriented <100> direction. Surface diffusion coefficients of Ga on a Ge(100) plane were determined at θ=0.3 in the temperature range of 470K-530K. Activation energy of diffusion was 0.6eV at the coverage.