Numéro
J. Phys. Colloques
Volume 49, Numéro C6, Novembre 1988
35th International Field Emission Symposium / 35éme Symposium International d'Emission de Champ
Page(s) C6-155 - C6-160
DOI https://doi.org/10.1051/jphyscol:1988626
35th International Field Emission Symposium / 35éme Symposium International d'Emission de Champ

J. Phys. Colloques 49 (1988) C6-155-C6-160

DOI: 10.1051/jphyscol:1988626

FIELD EMISSION FROM SEMICONDUCTOR POINT ARRAYS

R.Z. BAKHTIZIN

Department of Experimental Physics, Bashkir State University, Ufa 450074, U.S.S.R.


Abstract
The paper reports on the fabrication of multi-point arrays from Ge, Si, and GaAs by means of optimization of photolithographic method. The origin of uncontrollable centres of emission on the surface has been investigated by means of SEM, AE- and SIM-spectroscopy. An investigation of the electron energy distribution from the probing zone of cathode surface at different operating modes of the cathode have shown the "broadening" of distribution with the increase of current take-off level. By measuring the frequency characteristics of the field emission current fluctuations it has been found that the noise power spectrum is well approximated by the I/f function in the low frequency range.