| Numéro |
J. Phys. Colloques
Volume 49, Numéro C6, Novembre 1988
35th International Field Emission Symposium / 35éme Symposium International d'Emission de Champ
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| Page(s) | C6-137 - C6-143 | |
| DOI | https://doi.org/10.1051/jphyscol:1988623 | |
35th International Field Emission Symposium / 35éme Symposium International d'Emission de Champ
J. Phys. Colloques 49 (1988) C6-137-C6-143
DOI: 10.1051/jphyscol:1988623
Institute of Semiconductors, Academy of Sciences of the Ukrainian S.S.R., Kiev (U.S.S.R.) 252028, Kiev-28, Prospect Nauki 45, U.S.S.R.
J. Phys. Colloques 49 (1988) C6-137-C6-143
DOI: 10.1051/jphyscol:1988623
FIELD-INDUCED IONIZATION AND EMISSION OF ELECTRONS AND IONS IN MIS STRUCTURES
V.G. LITOVCHENKO et I.P. LISOVSKIIInstitute of Semiconductors, Academy of Sciences of the Ukrainian S.S.R., Kiev (U.S.S.R.) 252028, Kiev-28, Prospect Nauki 45, U.S.S.R.
Abstract
The effects of field emission and field-induced defect creation in MIS structures with modified insulator layers were investigated. It was found that in this case the processes involved possessed a number of specifie features. The experimental data permit one to calculate the parameters of field emission for modified and graded insulator structures. New effects of fast and slow surface state created at the Si-SiO2 interface caused by positive bias were observed. A model based on field emission of protons is proposed.