| Numéro |
J. Phys. Colloques
Volume 49, Numéro C5, Octobre 1988
Interface Science and Engineering '87An International Conference on the Structure and Properties of Internal Interfaces |
|
|---|---|---|
| Page(s) | C5-631 - C5-634 | |
| DOI | https://doi.org/10.1051/jphyscol:1988580 | |
Interface Science and Engineering '87
An International Conference on the Structure and Properties of Internal Interfaces
J. Phys. Colloques 49 (1988) C5-631-C5-634
DOI: 10.1051/jphyscol:1988580
Shanghai Jiao Tong University, Department of Materials Science and Engineering, Shanghai 200030, China
An International Conference on the Structure and Properties of Internal Interfaces
J. Phys. Colloques 49 (1988) C5-631-C5-634
DOI: 10.1051/jphyscol:1988580
INTERDIFFUSION OF Au/Ni/Cr ON SILICON SUBSTRATE
B. YAN, D. LIN et D. MAOShanghai Jiao Tong University, Department of Materials Science and Engineering, Shanghai 200030, China
Abstract
By using surface resistance measurement and Auger Electron Spectroscopy, the interdiffusion behavior of Au/Ni/Cr metallization on silicon substrate was examined. Cr was proved to be an excellent diffusion barrier between Au and Si up to 450°C for a Cr layer of 500Å thick which would avoid serious degradation of solderability and resistivity of the metallization. Ni was found much less effective as a diffusion barrier and therefore was mainly to improve the solderability. It was shown that silicon outdiffusion was dominant in the interdiffusion between gold overlayer and silicon substrate. It was attributed to the large grain boundary area and high defect density in the polycrystalline gold film.