J. Phys. Colloques
Volume 48, Numéro C7, Décembre 19871st International Laser M2P Conference
|Page(s)||C7-687 - C7-687|
J. Phys. Colloques 48 (1987) C7-687-C7-687
STUDIES OF SAPPHIRE PHOTOABLATION BY LASER-INDUCED FLUORESCENCE AND PHOTOTHERMAL DEFORMATION MEASUREMENTSR.W. DREYFUS, R. KELLY, F.A. MC DONALD and R.J. von GUTFELD
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, U.S.A.
Crystalline sapphire displays a low, 0.6 J/CM2, threshold for etching with 193 nm excimer pulses. Understanding this low-threshold etching involves knowledge of the pathways by which laser energy gives rise to material removal. An accurate knowledge of surface temperature during irradiation appears sufficient to differentiate between classical thermal vaporization and electronic, I.E. photochemical mechanisms for etching.