| Numéro |
J. Phys. Colloques
Volume 48, Numéro C6, Novembre 1987
34th International Field Emission Symposium / 34ème Symposium International d'Emission de Champ
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| Page(s) | C6-41 - C6-46 | |
| DOI | https://doi.org/10.1051/jphyscol:1987607 | |
34th International Field Emission Symposium / 34ème Symposium International d'Emission de Champ
J. Phys. Colloques 48 (1987) C6-41-C6-46
DOI: 10.1051/jphyscol:1987607
Physics Department, The Pennsylvania State University, University Park, Pennsylvania 16802, U.S.A.
J. Phys. Colloques 48 (1987) C6-41-C6-46
DOI: 10.1051/jphyscol:1987607
THE ATOMIC STRUCTURE OF SILICON AND METAL SURFACES
T.T. Tsong, H.M. Liu, Q.J. Gao et D.L. FengPhysics Department, The Pennsylvania State University, University Park, Pennsylvania 16802, U.S.A.
Abstract
Using FIM, we have studied the atomic structure of thermally equilibrated surfaces of silicon and metals. The (1x2) reconstruction of Pt and Ir (110), the (1x5) reconstruction of Ir (001) and the reconstruction of Pt (001) can be directly observed with a pulsed-laser-heating technique. Images of atomically resolved and well ordered silicon surfaces are obtained for the first time with FIM. Most surfaces are reconstructed. Two distinctly different structures are found for the Si (023) and some other surfaces.