| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-413 - C5-417 | |
| DOI | https://doi.org/10.1051/jphyscol:1987588 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-413-C5-417
DOI: 10.1051/jphyscol:1987588
1 Physics Department, Northeastern University, Boston, MA 02115, U.S.A.
2 Bell-Core, Red Bank, NJ 00701, U.S.A.
J. Phys. Colloques 48 (1987) C5-413-C5-417
DOI: 10.1051/jphyscol:1987588
PHOTOLUMINESCENCE STUDIES OF n-TYPE MODULATION DOPED AlGaAs-GaAs MULTIPLE QUANTUM WELLS IN TILTED MAGNETIC FIELDS
K.S. LEE1, C.H. PERRY1, W. ZHOU1 et J.M. WORLOCK21 Physics Department, Northeastern University, Boston, MA 02115, U.S.A.
2 Bell-Core, Red Bank, NJ 00701, U.S.A.
Abstract
We have investigated the effect of tilted magnetic fields on the energetics and the intensity of the photoluminescence in n-type modulation doped AlGaAs-GaAs multiple quantum well structures. Combined resonance excitations are observed ; the data can be analyzed into contributions from field components parallel and perpendicular to the surface normal. Effective masses in the two orthogonal directions can be deduced. The overall luminescence efficiency increases with magnetic field for all orientations but is greater for axial fields than for radial fields.