| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-293 - C5-300 | |
| DOI | https://doi.org/10.1051/jphyscol:1987564 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-293-C5-300
DOI: 10.1051/jphyscol:1987564
1 Institut für Physik, Montanuniversität, A-8700 Leoben, Austria
2 Institut für Experimentalphysik, Johannes Kepler Universität, A-4040 Linz, Austria
J. Phys. Colloques 48 (1987) C5-293-C5-300
DOI: 10.1051/jphyscol:1987564
IV-VI COMPOUND DOPING SUPERLATTICES
G. BAUER1 et W. JANTSCH21 Institut für Physik, Montanuniversität, A-8700 Leoben, Austria
2 Institut für Experimentalphysik, Johannes Kepler Universität, A-4040 Linz, Austria
Abstract
Doping superlattices ("nipi's") made of IV-VI compounds are interesting both with respect to their extraordinary physical properties and their possible applications for infrared optoelectronic devices. The properties of PbTe nipi's are reviewed with emphasis on band structure, lifetime of non-equilibrium carriers and photo-sensitivity.