| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
|
|
|---|---|---|
| Page(s) | C5-215 - C5-218 | |
| DOI | https://doi.org/10.1051/jphyscol:1987544 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-215-C5-218
DOI: 10.1051/jphyscol:1987544
1 Philips Research Laboratories, Box 80.000, NL-5600 JA Eindhoven, The Netherlands
2 Institute for Solid State Physics, University of Tokyo, Roppongi, Minato-ku, Tokyo 106, Japan
J. Phys. Colloques 48 (1987) C5-215-C5-218
DOI: 10.1051/jphyscol:1987544
THEORY OF QUANTUM WELL EXCITONS IN ELECTRIC AND MAGNETIC FIELDS
G.E.W. BAUER1 et T. ANDO21 Philips Research Laboratories, Box 80.000, NL-5600 JA Eindhoven, The Netherlands
2 Institute for Solid State Physics, University of Tokyo, Roppongi, Minato-ku, Tokyo 106, Japan
Abstract
The effects of external electric and magnetic fields on excitons in GaAs/AlGaAs quantum wells have been calculated in the effective mass approximation. Recent experiments by Viña et al. which identify exciton couplings induced by an electric field are satisfactorily explained by the effects of valence band mixing. The properties of magneto-excitons in quantum wells are also found to be characteristically affected by electric fields.