| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-159 - C5-162 | |
| DOI | https://doi.org/10.1051/jphyscol:1987531 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-159-C5-162
DOI: 10.1051/jphyscol:1987531
1 4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-7000 Stuttgart 80, F.R.G.
2 Physikalisches Institut, Universität Würzburg, Röntgenring 8, D-8700 Würzburg, F.R.G.
3 Dep. of Elec. and Comp. Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
4 NOW at C.S.I.R.O., Div. of Radio Physics, Epping, NSW 2121, Australia
J. Phys. Colloques 48 (1987) C5-159-C5-162
DOI: 10.1051/jphyscol:1987531
TEMPERATURE AND MAGNETIC FIELD INDUCED BANDSTRUCTURE REVERSAL IN GaSb/AlSb QUANTUM WELLS
A. FORCHEL1, U. CEBULLA1, G. TRÄNKLE1, W. OSSAU2, G. GRIFFITHS3, 4, S. SUBBANNA3 et H. KROEMER31 4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-7000 Stuttgart 80, F.R.G.
2 Physikalisches Institut, Universität Würzburg, Röntgenring 8, D-8700 Würzburg, F.R.G.
3 Dep. of Elec. and Comp. Engineering, University of California, Santa Barbara, CA 93106, U.S.A.
4 NOW at C.S.I.R.O., Div. of Radio Physics, Epping, NSW 2121, Australia
Abstract
We have investigated temperature and magnetic field induced changes in the occupation of the ϒ- and L-point minima of the conduction band of GaSb/ALSb quantum wells in the vicinity of the size induced cross-over from direct to indirect bandstructure by luminescence spectroscopy. For indirect gap samples with sufficiently small L-ϒ energy splitting a change to effectively direct gap behaviour is observed as the temperature is increased. Direct gap quantum wells with well widths slightly larger than necessary for the cross-over can be converted to indirect gap systems by using the different energy shifts of ϒ-and L-point in magnetic fields.