| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-151 - C5-154 | |
| DOI | https://doi.org/10.1051/jphyscol:1987529 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-151-C5-154
DOI: 10.1051/jphyscol:1987529
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, U.S.A.
J. Phys. Colloques 48 (1987) C5-151-C5-154
DOI: 10.1051/jphyscol:1987529
ELECTRONS AND HOLES IN InAs-Ga (Al) Sb (As) QUANTUM WELLS
H. MUNEKATA, T.P. SMITH III, F.F. FANG, L. ESAKI et L.L. CHANGIBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, U.S.A.
Abstract
Quantum wells composed of type-II heterojunctions of InAs-Ga(Al)Sb(As) ternary alloys have been prepared by molecular beam epitaxy as an extension of the binary InAs-GaSb. By increasing the alloy compositions, the nature of the conduction changes from semimetal-like to that of a single carrier. For the semimetallic quantum wells, the magneto-transport behaviors reflect the change in carrier densities, leading to the annihilation of holes at high magnetic fields.