J. Phys. Colloques
Volume 48, Numéro C5, Novembre 19873rd International Conference on Modulated Semiconductor Structures
|Page(s)||C5-81 - C5-84|
J. Phys. Colloques 48 (1987) C5-81-C5-84
THE USE OF COMPOSITIONALLY GRADED LAYERS TO MINIMIZE SURFACE DEFECTS IN In(AsSb) STRAINED-LAYER SUPERLATTICESR.M. BIEFELD
Sandia National Laboratories, Albuquerque, NM 87185, U.S.A.
Surface defects have been studied in InAsxSb1-x / InSb strained-layer superlattices as a function of the profile of compositionaly graded buffer layers. Comparisons were made between constant composition, step-graded and continuously graded buffer layers. The use of either constant composition layers or step-graded buffer layers resulted in an increase in surface defects for large lattice mismatch (x>0.1). Surface defects were minimized by the use of continuously graded buffer layers for x = 0.2.