J. Phys. Colloques
Volume 48, Numéro C5, Novembre 19873rd International Conference on Modulated Semiconductor Structures
|Page(s)||C5-597 - C5-604|
J. Phys. Colloques 48 (1987) C5-597-C5-604
EPITAXY AND DEVICE APPLICATIONS OF GaAs ON SiJHANG W. LEE1, H. SHICHIJO2 et L.T. TRAN2
1 Kopin Corporation, 695 Myles Standish Blvd, Taunton, MA 02780, U.S.A.
2 Instruments Inc., Dallas, TX 75265, U. S. A.
Recent results of GaAs on Si epitaxy and device fabrication are reviewed. Emphasis is on the growth initiation procedures, defect reduction processes, and integrated circuit fabrication. The effects of Si substrate orientation and substrate temperature on the GaAs layer properties are detailed. Stress related issues are also discussed.