J. Phys. Colloques
Volume 48, Numéro C5, Novembre 19873rd International Conference on Modulated Semiconductor Structures
|Page(s)||C5-589 - C5-596|
J. Phys. Colloques 48 (1987) C5-589-C5-596
MULTILAYERED AMORPHOUS SILICON STRUCTURESM. HIROSE et S. MIYAZAKI
Department of Electrical Engineering, Hiroshima University, Higashihiroshima, 724, Japan
Ultra-thin multiple layered structures which consist of hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-Si1-XNX:H) have been systematically studied as a new class of semiconductor superlattices. The layer thickness can be controlled on an atomic scale, and hence the optical and electrical properties have been interpreted by assuming the quantized states in the potential well layers, as in the case of crystalline semiconductor superlattices. The existence of the quantized levels in the a-Si:H well layer has been directly demonstrated by observing the resonant tunneling current through a-Si:H/a-Si3N4:H double barrier structures. Novel thin film transistors (TFTs) in which the a-Si:H/a-Si1-XNX:H multilayer is employed as an active region have been designed and fabricated.