| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-553 - C5-556 | |
| DOI | https://doi.org/10.1051/jphyscol:19875119 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-553-C5-556
DOI: 10.1051/jphyscol:19875119
1 Department of Theoretical Physics, University of Oxford, GB-Oxford, OX1 3NP, Great-Britain
2 Department of Physics, University of Surrey, GB-Guildford, GU2 5XH, Great-Britain
J. Phys. Colloques 48 (1987) C5-553-C5-556
DOI: 10.1051/jphyscol:19875119
VALENCE BAND STRUCTURE OF STRAINED-LAYER Si-Si0.5Ge0.5 SUPERLATTICES
U. EKENBERG1, W. BATTY2 et E.P. O'REILLY21 Department of Theoretical Physics, University of Oxford, GB-Oxford, OX1 3NP, Great-Britain
2 Department of Physics, University of Surrey, GB-Guildford, GU2 5XH, Great-Britain
Abstract
We calculate the valence subband dispersion of Si0.5Ge0.5 - Si strained layer structures grown on a Si (001) substrate and on a Si0.75Ge0.25 buffer. We use the 6x6 Luttinger-Kohn Hamiltonian, including the effects both of strain and of the split-off band. The heavy-hole zone centre states are separated by over 60meV from the light-hole states and the highest valence subband has a low zone-centre effective mass (m* ~ .15 - .18), suggesting such structures to be useful for high hole mobility applications. Away from the zone centre, the bands are strongly anisotropic. We predict little difference in electronic properties for p-type Si0.5Ge0.5-Si superlattices when grown on Si substrates or Si0.75Ge0.25 buffers.