Numéro
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
Page(s) C5-51 - C5-56
DOI https://doi.org/10.1051/jphyscol:1987508
3rd International Conference on Modulated Semiconductor Structures

J. Phys. Colloques 48 (1987) C5-51-C5-56

DOI: 10.1051/jphyscol:1987508

X-RAY REFLECTIVITY OF InAs/GaAs HETEROSTRUCTURES WITH SURFACE AND INTERFACIAL ROUGHNESS

S.C. WORONICK1, B.X. YANG1, A. KROL1, Y.H. KAO1, H. MUNEKATA2, L.L. CHANG2 et J.C. PHILLIPS3

1  Department of Physics, State University of New York at Stony Brook, Stony Brook, NY 11794, U.S.A.
2  IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, U.S.A.
3  Department of Chemistry, State University of New York at Buffalo, Buffalo, NY 14214, U.S.A.


Abstract
The reflection of monochromatic x-rays by heterostructures shows regular oscillations in the reflectivity as a function of the grazing angle. These oscillations contain information about the layer thickness and interfacial roughness. Our results indicate that an overgrowth of an InAs layer on GaAs by molecular beam epitaxy has started with a rough surface and ended with a smooth finish. We thus demonstrate a practical technique for nondestructive evaluation of the interfacial roughness in semiconductor heterostructures.