Numéro
J. Phys. Colloques
Volume 47, Numéro C8, Décembre 1986
EXAFS and Near Edge Structure IV
Page(s) C8-503 - C8-508
DOI https://doi.org/10.1051/jphyscol:1986894
EXAFS and Near Edge Structure IV

J. Phys. Colloques 47 (1986) C8-503-C8-508

DOI: 10.1051/jphyscol:1986894

SURFACE EXAFS AND XANES STUDIES OF S/Ni (110) AND S/Ni (111)

T. OHTA1, Y. KITAJIMA2, P.M. STEFAN3, M.L. SHEK STEFAN4, N. KOSUGI2 et H. KURODA2

1  Photon Factory, National Laboratory for High Energy Physics, Tsukuba, Ibaraki 305, Japan
2  Department of Chemistry, Faculty of Science, the University of Tokyo, Hongo, Tokyo 113, Japan
3  NSLS, Brookhaven National Laboratory, Upton, Long Island, NY 11973, U.S.A.
4  Department of Physics, Brookhaven National Laboratory, Upton, Long Island, NY 11973, U.S.A.


Abstract
S K-edge SEXAFS were measured on c(2x2)S/Ni(110) and S/Ni(111) by monitoring the S KLL Auger intensity as a function of photon energy and polarization direction. Analysis of the data from c(2x2)S/Ni(110) gave results that a sulfur atom is located on a hollow site with R(S-top layer Ni) of (2.31±0.02) Å and R(S-bottom Ni) of (2.19±0.03) Å. These results are in close agreement with the recent analysis of LEED. From the preliminary SEXAFS work on p(2x2)S/Ni (111), S-nearest neighbor Ni bond distance was determined to be 2.20±0.04 Å.