| Numéro |
J. Phys. Colloques
Volume 47, Numéro C8, Décembre 1986
EXAFS and Near Edge Structure IV
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|---|---|---|
| Page(s) | C8-901 - C8-904 | |
| DOI | https://doi.org/10.1051/jphyscol:19868175 | |
EXAFS and Near Edge Structure IV
J. Phys. Colloques 47 (1986) C8-901-C8-904
DOI: 10.1051/jphyscol:19868175
1 SERC Daresbury Laboratory, GB-Warrington WA4 4AD, Great-Britain
2 Department of Engineering Materials, University of Southampton, GB-Southampton S09 5NH, Great-Britain
3 Department of Pure and Applied Chemistry, University of Strathclyde, GB-Glasgow G1 1XL, Great-Britain
J. Phys. Colloques 47 (1986) C8-901-C8-904
DOI: 10.1051/jphyscol:19868175
THE STRUCTURAL ENVIRONMENT OF Te DOPANTS IN GaAs USING EXAFS IN FLUORESCENCE MODE
G.N. GREAVES1, P.J. HALFPENNY2, G.M. LAMBLE3 et K.J. ROBERTS31 SERC Daresbury Laboratory, GB-Warrington WA4 4AD, Great-Britain
2 Department of Engineering Materials, University of Southampton, GB-Southampton S09 5NH, Great-Britain
3 Department of Pure and Applied Chemistry, University of Strathclyde, GB-Glasgow G1 1XL, Great-Britain
Abstract
The local co-ordination of 'grown-in' Te in GaAs has been determined by FLEXAFS measurements. At carrier concentrations of 8 x 1018 cm-3 considerable dilation of the first co-ordination sphere around the dopant takes place, with appreciable contraction of the second co-ordination sphere. The first, second and third nearest neighbour distances were found to be 2.58 (± 0.02) Å, 3.52 (± 0.05) Å and 4.58 (± 0.1) Å, respectively. These are discussed in terms of various models which have been proposed for group VI dopants in GaAs.