Numéro |
J. Phys. Colloques
Volume 47, Numéro C2, Mars 1986
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ
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Page(s) | C2-485 - C2-491 | |
DOI | https://doi.org/10.1051/jphyscol:1986274 |
J. Phys. Colloques 47 (1986) C2-485-C2-491
DOI: 10.1051/jphyscol:1986274
A SCANNING TUNNELING MICROSCOPE FOR SURFACE MODIFICATION
M.A. McCORD et R.F.W. PEASESolid State Electronics Laboratory, Stanford University, Stanford, CA 94305, U.S.A.
Abstract
With the recent success for the scanning tunneling microscope (STM) has come question of whether the instrument might be used for material modifications lithography. We embarked on the design of an STM with this application in mind. Its features include a wide x-y piezoelectric scan range of 10 or more microns, plus coarse mechanical motion in the x direction to a new region on the sample while in vacuum. Coarse motion in the z direction is accomplished with a micrometer drive, while fine movement is done with a piezoelectric transducer. Both the sample and the tip can be quickly changed. Finally, the instrument is mounted on the stage of a scanning electron microscope which allows real-time observation while it is operating. Using this instrument we were able to pattern sub-micron gold lines on silicon substrates by sputter etching through a contamination resist pattern laid down by the tunneling electrons polymerizing organic molecules present on the target. We were also able to expose lines using a Langmuir-Blodgett film, which consists of several molecular monolayers of a material known to act as an electron beam resist deposited individually on the surface of the substrate.