| Numéro |
J. Phys. Colloques
Volume 47, Numéro C2, Mars 1986
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ
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| Page(s) | C2-293 - C2-296 | |
| DOI | https://doi.org/10.1051/jphyscol:1986244 | |
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ
J. Phys. Colloques 47 (1986) C2-293-C2-296
DOI: 10.1051/jphyscol:1986244
Inst. Sci. Ind. Res., Osaka University, Ibaraki, Osaka 567, Japan
J. Phys. Colloques 47 (1986) C2-293-C2-296
DOI: 10.1051/jphyscol:1986244
PULSE LASER ATOM PROBE STUDY OF GaP
T. ADACHI, T. KURODA et S. NAKAMURAInst. Sci. Ind. Res., Osaka University, Ibaraki, Osaka 567, Japan
Abstract
GaP tips prepared from whiskers grown by the vapour phase reaction, were analyzed using our combined-type atom-probe FIM by laser pulse operation instead of high voltage pulse operation. It was found that (1) The composition is Ga : P=1 : 1 at cryogenic temperature 45K in vacuum of better than 1 x 10-8 torr. (2) Much more cluster ions of phosphorus atom in laser pulse mode are detected in comparison to that in high voltage pulse mode. (3) Mass resolution for laser pulse operation is high enough to resolved the hydride ions even at linear type mode. We also make clear the influences of laser beam power density irradiated on the tip for field evaporation.