| Numéro |
J. Phys. Colloques
Volume 46, Numéro C4, Avril 1985
International Conference on the Structure and Properties of Internal Interfaces
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|---|---|---|
| Page(s) | C4-369 - C4-377 | |
| DOI | https://doi.org/10.1051/jphyscol:1985440 | |
International Conference on the Structure and Properties of Internal Interfaces
J. Phys. Colloques 46 (1985) C4-369-C4-377
DOI: 10.1051/jphyscol:1985440
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974, U.S.A.
J. Phys. Colloques 46 (1985) C4-369-C4-377
DOI: 10.1051/jphyscol:1985440
ATOMIC STRUCTURE AND PROPERTIES OF EPITAXIAL THIN-FILM SEMICONDUCTOR INTERFACES
J.M. Gibson, R.T. Tung, J.M. Phillips et R. HullAT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974, U.S.A.
Abstract
Using high-resolution transmission electron microscopy we have studied atomic structure of interfaces between epitaxial thin films of metals, insulators or semiconductors on semiconductors. For epitaxial cobalt and nickel disilicide we find exceptionally uniform interfaces with a significant dependence of the schottky barrier height on interface structure. For epitaxial alkaline-earth fluorides, the film growth and crystalline structure can be understood from the interface structure. We also report recent results on silicon based semiconductor superlattices.