| Numéro |
J. Phys. Colloques
Volume 44, Numéro C5, Octobre 1983
Interactions Laser-Solides, Recuits par Faisceaux d'Energie / Laser-Solid Interactions and Transient Thermal Processing of Materials
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| Page(s) | C5-129 - C5-129 | |
| DOI | https://doi.org/10.1051/jphyscol:1983521 | |
Interactions Laser-Solides, Recuits par Faisceaux d'Energie / Laser-Solid Interactions and Transient Thermal Processing of Materials
J. Phys. Colloques 44 (1983) C5-129-C5-129
DOI: 10.1051/jphyscol:1983521
1 Institut für Plasmaphysik, Association EURATORM-KFA
2 Institut für Festkörperforschung, Kernforschungsanlags Jülich, D-5170 Jülich, F.R.G.
J. Phys. Colloques 44 (1983) C5-129-C5-129
DOI: 10.1051/jphyscol:1983521
LATTICE TEMPERATURE OF GaAs AND Si DURING PULSED LASER ANNEALING
A. Pospieszczyk1, M. Abdel Harith1 et B. Stritzker21 Institut für Plasmaphysik, Association EURATORM-KFA
2 Institut für Festkörperforschung, Kernforschungsanlags Jülich, D-5170 Jülich, F.R.G.
Abstract
Both GaAs (100) and Si (110) single crystals were laser annealed with a 20 ns ruby laser pulse. By means of a time-of-flight measurement the velocity distribution and the density variation of evaporated Ga or As and Si atoms were determined for different energy densities. Simultaneously the reflectivity of the crystal surface was measured time-resolved. The data show consistently that the molten phase with high reflectivity occurs at energy densities >≈ 0.35 J cm-2 for GaAs and >≈ 0.8 J cm-2 for Si. The results confirm a purely thermal model for laser annealing of semiconductors. In the case of GaAs the influence of the latent heat during melting could be clearly resolved.