| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
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|---|---|---|
| Page(s) | C6-235 - C6-237 | |
| DOI | https://doi.org/10.1051/jphyscol:1981667 | |
International Conference on Phonon Physics
J. Phys. Colloques 42 (1981) C6-235-C6-237
DOI: 10.1051/jphyscol:1981667
1 Service des Basses Températures, Laboratoire de Cryophysique, Centre d'Etudes Nucléaires de Grenoble, 85 X, 38041 Grenoble Cedex, France
2 Physikalisches Institut, University of Stuttgart, 7000 Stuttgart 80, F.R.G.
J. Phys. Colloques 42 (1981) C6-235-C6-237
DOI: 10.1051/jphyscol:1981667
A STUDY OF THE GROUND STATE OF ACCEPTORS IN SILICON FROM THERMALTRANSPORT EXPERIMENTS
A.M. De Goër1, M. Locatelli1 et K. Lassmann21 Service des Basses Températures, Laboratoire de Cryophysique, Centre d'Etudes Nucléaires de Grenoble, 85 X, 38041 Grenoble Cedex, France
2 Physikalisches Institut, University of Stuttgart, 7000 Stuttgart 80, F.R.G.
Abstract
Thermal conductivity measurements of silicon crystals doped with B or In have shown the presence of several phonon scattering processes. Theresonant effect observed below 1 K is ascribed to the existence of a distribution of splittings N(δ) of the Ɖ8 ground state of the acceptor, which could be related to the presence of oxygen and carbon impurities. In twocases, the maximum of N(δ) occurs for δ max near 6 GHz, in agreement withprevious ultrasonic studies (δmax > 4 GHz).