| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
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|---|---|---|
| Page(s) | C6-105 - C6-107 | |
| DOI | https://doi.org/10.1051/jphyscol:1981633 | |
International Conference on Phonon Physics
J. Phys. Colloques 42 (1981) C6-105-C6-107
DOI: 10.1051/jphyscol:1981633
Laboratoire de Physique des Solides, Associé au C.N.R.S., Université Paul Sabatier, 31062 Toulouse cedex, France
J. Phys. Colloques 42 (1981) C6-105-C6-107
DOI: 10.1051/jphyscol:1981633
LOW FREQUENCY RAMAN SCATTERING IN MIXED Ga1-xAlxAs AND Ga1-xInxAs ALLOYS
R. Carles, N. Saint-Cricq, A. Zwick, M.A. Renucci et J.B. RenucciLaboratoire de Physique des Solides, Associé au C.N.R.S., Université Paul Sabatier, 31062 Toulouse cedex, France
Abstract
We report Raman studies of disorder induced scattering in the Ga1-xAlxAs and Ga1-xInxAs alloys. Previous results [1] are confirmed for the Ga1-xAlxAs system for a wider range of concentration. The role of the substituant is discussed through the analysis of the Ga1-xInxAs system.