| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
|
|
|---|---|---|
| Page(s) | C6-661 - C6-663 | |
| DOI | https://doi.org/10.1051/jphyscol:19816193 | |
International Conference on Phonon Physics
J. Phys. Colloques 42 (1981) C6-661-C6-663
DOI: 10.1051/jphyscol:19816193
Institut de Physique Appliquée, EPFL, 1015 Lausanne, Switzerland
J. Phys. Colloques 42 (1981) C6-661-C6-663
DOI: 10.1051/jphyscol:19816193
LOCAL-FIELD EFFECTS AND ZONE-CENTER PHONONS IN POLAR AND COVALENT CUBIC SEMICONDUCTORS
R. Resta et A. BaldereschiInstitut de Physique Appliquée, EPFL, 1015 Lausanne, Switzerland
Abstract
Microscopic lattice-dynamics calculations based on first-principle dielectric matrices are presented for Si, Ge, GaAs, and ZnSe. Phonon frequencies are calculated in the limit of long wavelength and compare well with experimental data. Local-field effects are essential to explain the trends with increasing ionicity in the Ge isoelectronic series. The electronic polarization density associated to zone-center phonons is analyzed in real space.