| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
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|
|---|---|---|
| Page(s) | C6-617 - C6-624 | |
| DOI | https://doi.org/10.1051/jphyscol:19816180 | |
J. Phys. Colloques 42 (1981) C6-617-C6-624
DOI: 10.1051/jphyscol:19816180
RECENT ADVANCES IN THE THEORY OF PHONONS IN SEMICONDUCTORS
R.M. Martin1, 21 Xerox Palo Alto Research Centers, 3333 Coyote Hill Road, Palo Alto, CA 94304,U.S.A.
2 Université P. et M. Curie, Dept. Recherches Physiques, 4 place Jussieu,75230 Paris, France.
Abstract
Calculations of structural energies of solids have recently reached a new stage, in which it has been shown to be feasible to calculate directly crystal structures of minimum energy and distortion energies that determine harmonic phonon eigenmodes and anharmonic terms. In this paper are discussed 1) calculational methods, 2) recent results, which have been shown by several groups to give accurate results for Si, Ge, GaAs and Se with no adjustable parameters, 3) the corresponding electronic charge densities, which show graphically the bonding and suggest interpretations for the origins of the atomic forces. Comparisons of direct computations of total energy differences with second-order perturbation calculations of harmonic coefficients shows the advantages and disadvantages of each method and how each can complement the other.