| Numéro |
J. Phys. Colloques
Volume 42, Numéro C6, Décembre 1981
International Conference on Phonon Physics
|
|
|---|---|---|
| Page(s) | C6-383 - C6-385 | |
| DOI | https://doi.org/10.1051/jphyscol:19816111 | |
International Conference on Phonon Physics
J. Phys. Colloques 42 (1981) C6-383-C6-385
DOI: 10.1051/jphyscol:19816111
1 Service des Basses Températures, Laboratoire de Cryophysique, Centre d'Etudes Nucléaires de Grenoble, 85 X-38041 Grenoble Cedex, France.
2 Faculté des Sciences, Université Libanaise, Al-Hadet, Liban
3 ER 155, ENSIEG, BP 46, 38042 St Martin d'Hères, France.
J. Phys. Colloques 42 (1981) C6-383-C6-385
DOI: 10.1051/jphyscol:19816111
ON THE THERMAL AND ELECTRICAL CONDUCTIVITY OF V3Si AND V5Si3
A.F. Khoder1, M. Couach1, M. Locatelli1, M. Abou-Ghantous2 et J.P.Senateur31 Service des Basses Températures, Laboratoire de Cryophysique, Centre d'Etudes Nucléaires de Grenoble, 85 X-38041 Grenoble Cedex, France.
2 Faculté des Sciences, Université Libanaise, Al-Hadet, Liban
3 ER 155, ENSIEG, BP 46, 38042 St Martin d'Hères, France.
Abstract
Thermal conductivity and electrical resistivity measurements have been performed on V3Si and V5Si3 single crystals. Thermal conductivity anomalies are observed on both compounds and seem likely to be related to the resistivity "saturation" behaviour exhibited by these two compounds.