Numéro
J. Phys. Colloques
Volume 42, Numéro C5, Octobre 1981
ICIFUAS-7
Seventh International Conference on Internal Friction and Ultrasonic Attenuation in Solids
Page(s) C5-351 - C5-356
DOI https://doi.org/10.1051/jphyscol:1981552
ICIFUAS-7
Seventh International Conference on Internal Friction and Ultrasonic Attenuation in Solids

J. Phys. Colloques 42 (1981) C5-351-C5-356

DOI: 10.1051/jphyscol:1981552

TEMPERATURE DEPENDENCE OF DISLOCATION RESONANCE DAMPING

H. Schmidt, D. Lenz et K. Lücke

Institut für Allgemeine Metallkunde und Metallphysik, RWTH Aachen, F.R.G.


Abstract
We have simultaneously measured the frequency dependence (10 to 90 MHz) of the ultrasonic attenuation α and sound velocity v on high purity Cu as function of temperature (4.2 ≤ T ≤ 300K). Irradiation pinning was used to separate the dislocation resonance (DR) contributions αD and ƊvD/vo. The evaluation of data is considerably improved by the use of the frequency dependence of ƊvD/vo, specially at T < 50K where αD becomes masked by the phonon-electron attenuation. The observed DR-effects have been analyzed in terms of the Granato-Lücke DR-theory. From the derived temperature dependences of ΛL2, B/Λ and L2B (Λ dislocation density, L dislocation mean free loop length between pinning points, B dislocation drag coefficient) we find (i) B(T) in agreement with current theories and B(273K) = (4 ± 2 ). 10-5Ns/m2 including the electron drag coefficient Be = (4 ± 2).10-6Ns/m2 ; (ii) L to be independent of T but Λ to decrease with T down to the lowest T. This Λ(T) behaviour is discussed.