| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-471 - C4-474 | |
| DOI | https://doi.org/10.1051/jphyscol:1981499 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-471-C4-474
DOI: 10.1051/jphyscol:1981499
1 Kanegafuchi Chemical Industry, Yoshida- cho 1-2-80, Kobe 652, Japan.
2 Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
J. Phys. Colloques 42 (1981) C4-471-C4-474
DOI: 10.1051/jphyscol:1981499
VALENCY ELECTRON CONTROL IN A GLOW DISCHARGE PRODUCED a-SiC : H AND ITS APPLICATION TO a-Si SOLAR CELL
Y. Tawada1, M. Kondo2, H. Okamoto2 and Y. Hamakawa21 Kanegafuchi Chemical Industry, Yoshida- cho 1-2-80, Kobe 652, Japan.
2 Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
Abstract
A clear valency electron controlability has been found in hydrogenated amorphous silicon carbide produced by the plasma deposition of [SiH4 (1-x) + CH4 (x)] gas mixture. A series of experimental investigation on electrical, optical and optoelectronic properties in the amorphous silicon carbide has been made. Emplying a-SiC : H as a wide gap window material in p-i-n a-Si solar cell, more than 7.5% conversion efficiency has been obtained with Jsc=13.45mA/ cm2, Voc=0.909volts and FF=0.617.