| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-467 - C4-470 | |
| DOI | https://doi.org/10.1051/jphyscol:1981498 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-467-C4-470
DOI: 10.1051/jphyscol:1981498
1 Department of Physics, The University, Sheffield S3, U.K.
2 Department of Physics, The University, Dundee, Scotland
J. Phys. Colloques 42 (1981) C4-467-C4-470
DOI: 10.1051/jphyscol:1981498
INJECTION LUMINESCENCE IN AMORPHOUS SILICON p+-i-n+ JUNCTIONS
T.S. Nashashibi1, I.G. Austin1, T.M. Searle1, R.A. Gibson2, P.G. LeComber2 and W.E. Spear21 Department of Physics, The University, Sheffield S3, U.K.
2 Department of Physics, The University, Dundee, Scotland
Abstract
We present a detailed study of electroluminescence (EL) spectra and EL quantum efficiency in well characterised a-Si p+-i-n+ junctions under forward bias. The PL characteristics of the i region were probed using laser excitation. Some factors controlling EL efficiency are discussed. EL and PL recombination models are compared and discussed.