| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-399 - C4-402 | |
| DOI | https://doi.org/10.1051/jphyscol:1981486 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-399-C4-402
DOI: 10.1051/jphyscol:1981486
1 Hosei University, Koganei, Tokyo 184, Japan
2 Electrotechnical Laboratory, Sakuramura, Ibaragi 305, Japan
3 Institute for Solid State Physics, Roppongi, Tokyo 106, Japan
J. Phys. Colloques 42 (1981) C4-399-C4-402
DOI: 10.1051/jphyscol:1981486
DETAILED TEMPERATURE-CYCLING STUDIES OF PHOTOSTRUCTURAL CHANGE IN a-As2S3
H. Hamanaka1, K. Tanaka2, K. Tsuji3 and S. Minomura31 Hosei University, Koganei, Tokyo 184, Japan
2 Electrotechnical Laboratory, Sakuramura, Ibaragi 305, Japan
3 Institute for Solid State Physics, Roppongi, Tokyo 106, Japan
Abstract
Detailed quantitative analyses of temperature dependence of photostructural change accompanying photodarkening have been performed on As2S3 glass. Main results we obtained are ; (1) saturated values of an optical gap of As2S3 glass after illumination at different temperatures tends to a constant value independent of any previous histories of the sample such as thermal annealing or light irradiation , but (2) a change in the x-ray diffraction curve induced by photo-excitation is somewhat different phenomenologically from that by temperature effect.