| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-365 - C4-368 | |
| DOI | https://doi.org/10.1051/jphyscol:1981478 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-365-C4-368
DOI: 10.1051/jphyscol:1981478
1 Department of Physics, Maharshi Dayanand University, Rohtak-124001, India
2 Industrie-Anlagen Betriebsgesellschaft IABG, Einsteinstr. 20, D-8012 Ottobrunn, F.R.G.
3 Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, F.R.G.
J. Phys. Colloques 42 (1981) C4-365-C4-368
DOI: 10.1051/jphyscol:1981478
STUDY OF DEFECTS IN a-Ge AND a-GeHx USING SURFACE ACOUSTIC WAVE TECHNIQUE
K.L. Bhatia1, M.v. Haumeder2 and S. Hunklinger31 Department of Physics, Maharshi Dayanand University, Rohtak-124001, India
2 Industrie-Anlagen Betriebsgesellschaft IABG, Einsteinstr. 20, D-8012 Ottobrunn, F.R.G.
3 Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, F.R.G.
Abstract
The attenuation of surface acoustic waves in reactively sputtered films of a-Ge and a-GeHx (0 ≤ x < 0.25) at 300 MHz frequency and in the temperature range 0.5 K to 475 K has been studied. A strong attenuation peak is observed in a-Ge at 135 K whose position shifts on annealing. Incorporation of hydrogen completely suppresses this maximum and induces some new features in the attenuation. Below 20 K the attenuation varies linearly with temperature in all the films. Results are discussed in terms of structural relaxation of defects.