Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-293 - C4-296
DOI https://doi.org/10.1051/jphyscol:1981461
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-293-C4-296

DOI: 10.1051/jphyscol:1981461

SUB-GAP AND BAND EDGE OPTICAL ABSORPTION IN a-Si:H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY

W.B. Jackson and N.M. Amer

Applied Physics and Laser Spectroscopy Group, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720, U.S.A.


Abstract
Using photothermal deflection spectroscopy, we have investigated the optical absorption of various a-Si:H films in the range of 2.1-0.6 eV. An absorption shoulder which depends on deposition conditions and on doping was found and was attributed to dangling bonds. We also observed that the exponential edge broadens with increasing spin density.