J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|Page(s)||C4-293 - C4-296|
J. Phys. Colloques 42 (1981) C4-293-C4-296
SUB-GAP AND BAND EDGE OPTICAL ABSORPTION IN a-Si:H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPYW.B. Jackson and N.M. Amer
Applied Physics and Laser Spectroscopy Group, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720, U.S.A.
Using photothermal deflection spectroscopy, we have investigated the optical absorption of various a-Si:H films in the range of 2.1-0.6 eV. An absorption shoulder which depends on deposition conditions and on doping was found and was attributed to dangling bonds. We also observed that the exponential edge broadens with increasing spin density.