Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-265 - C4-268
DOI https://doi.org/10.1051/jphyscol:1981456
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-265-C4-268

DOI: 10.1051/jphyscol:1981456

PROPERTIES OF MICROCRYSTALLINE P-DOPED GLOW DISCHARGE Si:H FILMS

Y. Uchida, T. Ichimura, M. Ueno and M. Ohsawa

Fuji Electric Corporate Research and Development Ltd., 2-2-1 Nagasaka, Yokosuka, Kanagawa 240-02, Japan


Abstract
Phosphorous doped Si : H films were prepared by glow discharge decomposition of 0.01 PH3-SiH4 mixture gas diluted in H2 gas under various deposition conditions. The conductivity of the films increases from 2x10-4 (ohm cm)-1 to 8 (ohm cm)-1 with increasing discharging power for the deposition. Microcrystallization is observed through X-ray diffraction in the films exhibiting conductivity of 5x10-2 (ohm cm)-1 or higher. The film structure changes from amorphous phase to near perfect crystalline phase with increasing conductivity. This change is caused by the increase of the number of crystallites with nearly constant average size of about 60 Å. Microcrystallization occures even in a very thin (~100 Å) P-doped Si : H film. The microcrystallized P-doped film has been tentatively applied to a window side layer of an ITO/n-i-p/stainless-steel type solar cell. The low absorption coefficient of this film results in the increase of photocurrent of this cell in the short wavelength region.