| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-241 - C4-244 | |
| DOI | https://doi.org/10.1051/jphyscol:1981451 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-241-C4-244
DOI: 10.1051/jphyscol:1981451
Xerox Webster Research Center, Webster, NY 14580, U.S.A.
J. Phys. Colloques 42 (1981) C4-241-C4-244
DOI: 10.1051/jphyscol:1981451
NETWORK DIMENSIONALITY OF AMORPHOUS GeS2 : OPTICAL HIGH-PRESSURE EXPERIMENTS ON a-GeS2, 2d-GeS2, AND 3d-GeS2
R. Zallen, B.A. Weinstein and M.L. SladeXerox Webster Research Center, Webster, NY 14580, U.S.A.
Abstract
We have carried out studies of the effect of pressure on the following properties of the amorphous form and the two crystalline forms of germanium disulfide : the absorption edge in the near-UV, the refractive index in the near-IR, and the Raman spectrum. The results support the view that GeS2 glass is not a 3d-network glass akin to silica, but instead has lower network dimensionality.