Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-237 - C4-240
DOI https://doi.org/10.1051/jphyscol:1981450
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-237-C4-240

DOI: 10.1051/jphyscol:1981450

DIFFRACTION STUDY OF THE a-Si:H STRUCTURE EVOLUTION DURING ANNEALING TREATMENTS PERFORMED DIRECTLY ON THE X RAY GONIOMETER

J. Dixmier1, R. Mosseri1 and J.F. Sadoc2

1  Laboratoire de Physique des Solides, CNRS, 92190 Bellevue, France
2  Laboratoire de Physique des Solides, CNRS, Orsay, France


Abstract
Energy dispersive X ray diffraction patterns have been recorded each 15 minutes during the annealing treatment of a g.d a.Si57 H43 powder. Two series of heating were performed up to 350°C and 650°C separated by a return to room temperature. I. R. absorption spectroscopy revealed before annealing at least 15 at % of oxygen in the powder. The atomic distribution functions (A.D.F.) were calculated and compared to the pure a.Si ADF and also to that of a.Si50O50. It is shown that chemisorbed 0 atoms do not affect the ADF of a Si-H before annealing but that Si-O covalent bond distances appear clearly at 650°C following the Hydrogen effusion ADF changes.