| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-189 - C4-192 | |
| DOI | https://doi.org/10.1051/jphyscol:1981438 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-189-C4-192
DOI: 10.1051/jphyscol:1981438
1 Laboratoire de Physique des Solides associé au C.N.R.S., Université Paris-Sud, Bâtiment 510, 91405 Orsay Cedex, France
2 Laboratoire de Physique des Sotides - C.N.R.S., 1, place Aristide Briand, 92190 Meudon, France
J. Phys. Colloques 42 (1981) C4-189-C4-192
DOI: 10.1051/jphyscol:1981438
A NEW APPROACH OF AMORPHOUS SEMICONDUCTORS STRUCTURE USING CURVED SPACES
J.F. Sadoc1 and R. Mosseri21 Laboratoire de Physique des Solides associé au C.N.R.S., Université Paris-Sud, Bâtiment 510, 91405 Orsay Cedex, France
2 Laboratoire de Physique des Sotides - C.N.R.S., 1, place Aristide Briand, 92190 Meudon, France
Abstract
We present a description of amorphous structures using regular arrangement in curved spaces to describe the local order. Defects and disorder arise from the mapping of the curved spaces onto the euclidian space. Density variations are qualitatively explained by this description.