| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-1115 - C4-1121 | |
| DOI | https://doi.org/10.1051/jphyscol:19814242 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-1115-C4-1121
DOI: 10.1051/jphyscol:19814242
I.B.M. Thomas J. Watson Research Center, Yorktown Heights, New York 10598, U.S.A.
J. Phys. Colloques 42 (1981) C4-1115-C4-1121
DOI: 10.1051/jphyscol:19814242
INSULATOR PHYSICS AND ENGINEERING : ELECTRICALLY-ALTERABLE READ-ONLY-MEMORY APPLICATIONS
D.J. DiMariaI.B.M. Thomas J. Watson Research Center, Yorktown Heights, New York 10598, U.S.A.
Abstract
Current advances in the study of insulating materials, in particular SiO2 and Si-rich SiO2, have led to new types of electronic devices. Si-rich SiO2, if placed between a contacting electrode and SiO2, has been demonstrated to give enhanced electron injection into the SiO2 layer at moderate average electric fields. This phenomenon is believed to be due to localized electric field distortion at the Si-rich SiO2-SiO2 interface caused by the two phase nature (Si and SiO2) of the Si-rich SiO2 film. Chemically-vapor-deposited layers of Si-rich SiO2, SiO2, and Si-rich SiO2 have been used to charge and discharge floating poly-crystalline Si storage layers in a new type of non-volatile electrically-alterable memory.