J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|Page(s)||C4-1105 - C4-1114|
J. Phys. Colloques 42 (1981) C4-1105-C4-1114
PHOTOLITHOGRAPHIC PROCESSES IN AMORPHOUS SEMICONDUCTORSM. Janai
Dept. of Physics, Technion, Haifa 32000, Israel
Various photolithographic processes in a wide class of amorphous semiconductor films have been proposed and demonstrated in the past decade. The special features of the photosensitive amorphous semiconductor materials - non graininess, inorganic chemistry, deposition from the vapor phase and durability in dry and wet etchants - make them attractive photoresists for sub-micron fabrication of integrated circuits and integrated optics devices. The photolithographic processes in amorphous semiconductors can be classified according to four photosensitive effects :  light enhanced chemical reactivity,  photodissolution of metals,  light enhanced vaporization and  light induced crystallization. For each of these processes the mechanism, the sensitivity and the resolution are described with reference to published data, and its merit for the fabrication process of integrated circuits is discussed. Applications in which the photosensitive materials can serve as the final micro-component are emphasized.