| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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| Page(s) | C4-1069 - C4-1072 | |
| DOI | https://doi.org/10.1051/jphyscol:19814234 | |
J. Phys. Colloques 42 (1981) C4-1069-C4-1072
DOI: 10.1051/jphyscol:19814234
TRANSPORT PROPERTIES OF AMORPHOUS FILMS OF CADMIUM ARSENIDE
L. Zdanowicz1, W. Zdanowicz1, Cz. Weclewicz1 and J.C. Portal21 Institute of Solid State Physics PAS, Zabrze, Poland
2 INSA, Département de Physique, Toulouse, France
Abstract
Amorphous films of Cd3As2 have been vacuum deposited at Ts < 400 K. Halo-type diffraction pattern and microstructure composed of sphero-like clusters characterize the films. Some excess of arsenic was revealed by X-ray microprobe analysis. Two groups of a-films were found : /A/ high-ohmic films with ρ ~ 10-3 - 1.0 ohm.m and μH2 below 10-2m2/V.s and /B/ low-ohmic films with ρ ~10-4 ohm.m, H,≤ 0.05 m2 /V.s with different temperature dependences of resistivity, carrier mobility and thermopower. For group A conduction through localized states can be accepted at low temperatures ; for group B conduction through extended states is postulated. A sharply defined series of Shubnikov de Haas oscillations was observed in the group B films at B > 10 Tesla. This effect can be explained by considering the rapid increase of so-called cyclotron mobility above B ~ 10 Tesla in granular structure of the film. Calculated cyclotron effective mass m*c ≈ 0.1 mo is isotropic and three times larger than that for crystalline material.