Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-1021 - C4-1024
DOI https://doi.org/10.1051/jphyscol:19814223
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-1021-C4-1024

DOI: 10.1051/jphyscol:19814223

ELECTRONIC STRUCTURE OF AMORPHOUS SiOx

E. Martínez and F. Ynduráin

Departamento de Fisica Fundamental, Universidad Autónoma de Madrid, Canto Blanco, Madrid 34, Spain


Abstract
The electronic structure of amorphous SiOx (0 ≤ x ≤ 2) is studied in order to characterise the distribution of Si and O atoms in the alloy. Our results are in excellent agreement with photoemission data as well as with optical absorption measurements. Our calculations indicate that there is no short-range order such as (SiO4)ySi1-y and the distribution of silicon and oxygen atoms is random with no oxygen-oxygen bonds, the Si-O-Si bond angle for SiO being smaller (~120°) than for SiO2 (144°). The non-linear variation of the SiOx gap with concentration is related to the breaking of Si chains in the alloy. The implications of our results on the electronic properties of the Si/SiO2 interface are also discussed.