| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-1013 - C4-1016 | |
| DOI | https://doi.org/10.1051/jphyscol:19814221 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-1013-C4-1016
DOI: 10.1051/jphyscol:19814221
1 Laboratoire de Physique Electronique
2 Département de Physique des Matériaux
3 Laboratoire de Spectrométrie Ionique et Moléculaire Université de Lyon, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne, France
J. Phys. Colloques 42 (1981) C4-1013-C4-1016
DOI: 10.1051/jphyscol:19814221
CORRELATION BETWEEN CONDUCTIVITY, ELECTRON SPIN RESONANCE AND OPTICAL ABSORPTION IN RF SPUTTERED SiO2 FILMS
M. Meaudre1, R. Meaudre1, J. Tardy2 and B. Tribollet31 Laboratoire de Physique Electronique
2 Département de Physique des Matériaux
3 Laboratoire de Spectrométrie Ionique et Moléculaire Université de Lyon, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne, France
Abstract
This article reports on conductivity, ESR and optical absorption spectra obtained on rf sputtered SiO2 films. Measurements performed in different ambiences show that H2O considerably alters the physical properties of the films. The first pumping after the elaboration of a film reduces both, the conductivity and the total ESR signal, while the optical absorbance is increased. When wet air is again admitted the conductivity rapidly in creases while ESR and optical spectra are unchanged. It is concluded that charge carriers are introduced by H2O independently of intrinsic defects. Complementary experiments are suggested to investigate the possible influence of intrinsic defects on transport phenomena.